Method of forming a mask pattern for a semiconductor device

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C430S030000, C716S030000

Reexamination Certificate

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07544447

ABSTRACT:
A method of forming a mask pattern from a design pattern. A method may effectively compensate for pattern distortion resulting from an optical proximity effect (OPE). A method may obtain a precise line width. A method includes a first mask design processing and a second mask design processing.

REFERENCES:
patent: 6263299 (2001-07-01), Aleshin et al.
patent: 6472108 (2002-10-01), Lin

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