Method of forming a mask on a semiconductor substrate via photos

Details Method of forming a mask on a semiconductor substrate via photos Method of forming a mask on a semiconductor substrate via photos

1992-12-14

1995-04-18

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430314, 430323, 430324, 430325, 430326, G03F 736, G03F 738

Patent

active

054077869

ABSTRACT:
A photosensitive organic resin layer is formed on a semiconductor substrate. The resin layer is treated with ammonia before or after the resin layer is exposed. Then, the exposed organic resin layer is easily silylated. Due to the ammonia treatment, non-exposed portions of the organic resin layer is hardly silylated so that a high aspect ratio of patterning is realized.

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patent: 5041362 (1991-08-01), Douglas
IBM Technical Disclosure Bulletin, vol. 24, No. 10, Mar. 1982 "Image Reversal Liftoff Process", Hamel et al.
IBM Technical Disclosure Bulletin, vol. 27, No. 1A, Jun. 1984 "Image Reversal . . . Diazoquinone Derivatives", Chiong et al.
Research Disclosure, Feb. 1986, No. 26214, "Image Reversal of Positive Photoresists without additives".
Semiconductor International, Apr. 1987, "Positive Photoresist Enhancement Options", Burgraaf.
SPIE vol. 811 Proceedings, Apr. 2-3, 1987, "Mechanism of the Desire Process", B. Roland et al., pp. 55-61.
SPIE vol. 771 Proceedings, 1987, Mechanism and Kinetics of Silylation of Resist Layers from the Gas Phase, Visser et al., pp. 1-7.
Wolf et al., "The Scope and Mechanism of New Positive Tone Gas-Phase-Functionalized Plasma-Developed Resists", Journal of Electrochemical Society, pp. 1664-1669, Jul. 1984.

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