Method of forming a mask having nitride film

Details Method of forming a mask having nitride film Method of forming a mask having nitride film

2006-02-21

2006-02-21

Mohamedulla, Saleha R. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S313000, C430S323000

Reexamination Certificate

active

07001692

ABSTRACT:
A method of forming a mask comprises forming a mask layer including nitrogen, forming a photoresist pattern on the mask layer and etching the mask layer using a mixes gas including a first gas adapted for etching the mask layer and a second gas for increasing selectivity of the photoresist pattern, thereby forming a hard mask. In this manner, selectivity of the photoresist is improved while a high etching ratio of the nitride layer is maintained when forming a hard mask.

REFERENCES:
patent: 6020269 (2000-02-01), Wang et al.

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