Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-03-22
2005-03-22
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S158000
Reexamination Certificate
active
06869834
ABSTRACT:
The present invention provides a method of forming a low temperature polysilicon thin film transistor (LTPS TFT). A polysilicon layer including a channel region is formed first. A first and a second plasma enhanced chemical vapor deposition processes are sequentially performed to form a composite gate insulating layer composed of a TEOS-based silicon oxide layer and a silicon nitride layer on the channel region. Finally a gate electrode and a source/drain of the low temperature polysilicon thin film transistor are formed.
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Hsu Winston
Malsawma Lex H.
Smith Matthew
Toppoly Optoelectronics Corp.
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