Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-04-21
2011-10-25
Sarkar, Asok (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S631000, C438S637000, C257SE21576, C257SE21580, C257SE21582
Reexamination Certificate
active
08043959
ABSTRACT:
A method of forming a low-k dielectric layer or film includes forming a porous low-k dielectric layer or film over a wafer or substrate. Active bonding is introduced into the porous low-k dielectric layer or film to improve damage resistance and chemical integrity of the layer or film, to retain the low dielectric constant of the layer and film after subsequent processing. Introduction of the active bonding may be accomplished by introducing OH and/or H radicals into pores of the porous low-k dielectric layer or film to generate, in the case of a Si based low-k dielectric layer or film, Si—OH and/or Si—H active bonds. After further processing of the low-k dielectric film, the active bonding is removed from the low-k dielectric layer or film.
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Chinese Office Action issued Oct. 31, 2008.
Chou Chia Cheng
Iin Keng-Chu
Yeh Ming-Ling
Duane Morris LLP
Kouh Won Joon
Sarkar Asok
Slutsker Julia
Taiwan Semiconductor Manufacturing Co. Ltd.
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