Method of forming a low capacitance semiconductor device and...

Details Method of forming a low capacitance semiconductor device and... Method of forming a low capacitance semiconductor device and...

2007-02-06

2009-11-17

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S327000, C257S341000, C257S390000, C257SE29027, C257SE29121, C257SE29257

Reexamination Certificate

active

07619287

ABSTRACT:
In one embodiment a transistor is formed with a gate structure having an opening in the gate structure. An insulator is formed on at least sidewalls of the opening and a conductor is formed on the insulator.

REFERENCES:
patent: 5631484 (1997-05-01), Tsoi et al.
patent: 6621121 (2003-09-01), Baliga

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