Method of forming a low capacitance semiconductor device and...

Details Method of forming a low capacitance semiconductor device and... Method of forming a low capacitance semiconductor device and...

2007-03-20

2007-03-20

Tran, Long K. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S197000, C257S401000, C257SE27099, C257SE29027

Reexamination Certificate

active

10942060

ABSTRACT:
In one embodiment a transistor is formed with a gate structure having an opening in the gate structure. An insulator is formed on at least sidewalls of the opening and a conductor is formed on the insulator.

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patent: 2004/0108547 (2004-06-01), Venkatraman

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