Method of forming a light emitting diode

Details Method of forming a light emitting diode Method of forming a light emitting diode

1992-04-06

1993-10-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437129, 437984, 437944, 257 14, 372 43, H01L 2120, H01L 21265

Patent

active

052565807

ABSTRACT:
An optical semiconductor device is formed by using one controlled etch to form a "T" shaped contact structure on the device (20). The etch rate is controlled by judicious selection of materials to provide a cladding layer (17) that has a predetermined etch rate in hydrofluoric acid, a support layer (10) and a contact layer (18) that are not affected by hydrofluoric acid, a lift-off layer (19) that is dissolved by hydrofluoric acid, and a barrier layer (21). Dissolving of the lift-off layer (19) facilitates removing the barrier layer (21).

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Tiburg et al. "A Selective Etching of III-V Compounds with Redox Systems", Journal of Electrochemical Society vol. 123, No. 3 pp. 687-691, May 1976.
Van Dongen "The use of etching techniques in the charactericzation of degraded GaAs-GaAlAs Lasers" J. Electrochemical Soc. 127 (1980), pp. 238-239.

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