Method of forming a layer and semiconductor substrate

Details Method of forming a layer and semiconductor substrate Method of forming a layer and semiconductor substrate

1997-10-21

1999-04-27

Bowers, Charles

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

Ionized irradiation

438795, 438509, 148DIG93, 148DIG95, 148DIG94, H01L 21324, H01L 21477, H01L 2126, H01L 2142

Patent

active

058973818

ABSTRACT:
Rapid Thermal Processing of a semiconductor wafer is performed by scanning a laser beam across a silicon dioxide film in contact with a surface of the wafer. The silicon dioxide film absorbs the energy from the laser beam and converts the energy to heat. The heat, in turn, is transferred to the wafer. Temperature feedback can be obtained to increase control and uniformity of temperatures across the wafer.

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D. Maydan, Micromachining and Image Recording on Thin Films by Laser Beams, The Bell System Technical Journal, and pp. 1761-1789, Mar. 22, 1971.

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