Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2006-11-21
2011-10-25
Kim, Jay C (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C257S192000, C257S194000, C257S472000, C257SE29246, C257SE29252, C257SE29253, C257SE21403, C257SE21407, C257SE21409, C438S167000, C438S179000, C438S180000, C438S182000
Reexamination Certificate
active
08043906
ABSTRACT:
A III-nitride device includes a recessed electrode to produce a nominally off, or an enhancement mode, device. By providing a recessed electrode, a conduction channel formed at the interface of two III-nitride materials is interrupted when the electrode contact is inactive to prevent current flow in the device. The electrode can be a schottky contact or an insulated metal contact. Two ohmic contacts can be provided to form a rectifier device with nominally off characteristics. The recesses formed with the electrode can have sloped sides. The electrode can be formed in a number of geometries in conjunction with current carrying electrodes of the device. A nominally on device, or pinch resistor, is formed when the electrode is not recessed. A diode is also formed by providing non-recessed ohmic and schottky contacts through an insulator to an AlGaN layer.
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Farjami & Farjami LLP
International Rectifier Corporation
Kim Jay C
LandOfFree
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