Method of forming a high temperature stable ohmic contact to a I

Details Method of forming a high temperature stable ohmic contact to a I Method of forming a high temperature stable ohmic contact to a I

1987-11-30

1989-12-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437192, 437133, 437 31, 357 22, 357 16, 357 30, 148DIG10, 148DIG65, H01L 2144, H01L 21265

Patent

active

048898317

ABSTRACT:
An electrode structure of an electrode of a refractory metal or a silicide thereof on a layer of In.sub.x Ga.sub.1-x As (0<x<1) on a substrate of a III-V compound semiconductor is ohmic and is stable even at a high temperature, for example, 900.degree. C. This high temperature stable ohmic electrode structure allows ion implantation into the substrate with the electrode as a mask followed by annealing to form a doped region in alignment with the edge of the electrode.

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