Method of forming a high quality layer of BST

Details Method of forming a high quality layer of BST Method of forming a high quality layer of BST

1999-01-29

2000-12-12

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

H01L 2164

Patent

active

061598682

ABSTRACT:
A method of manufacturing a semiconductor device characterized by a method of forming a thin insulating film mainly composed of barium strontium titanate, the method having a first step for forming, on a semiconductor substrate, a thin BST film by a CVD method, and a second step for performing annealing at a temperature higher than a temperature at the thin BST films is formed so that crystallinity of the thin BST films is improved, wherein the temperature of the semiconductor substrate is maintained at a temperature higher than 250.degree. C. in a period of time between the first step and the second step in order to prevent a deterioration in a quality of the thin BST film.

REFERENCES:
patent: 5728603 (1998-03-01), Emesh et al.
patent: 5853500 (1998-12-01), Joshi et al.

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