Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2011-03-01
2011-03-01
Mai, Anh D (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S172000, C257SE21403
Reexamination Certificate
active
07897446
ABSTRACT:
A semiconductor device is fabricated to include source and drain contacts including an ohmic metal sunken into the barrier layer and a portion of the channel layer; a protective dielectric layer disposed between the source and drain contacts on the barrier layer; a metallization layer disposed in drain and source ohmic vias between the source contact and the protective dielectric layer and between the protective dielectric layer and the drain contact; and a metal T-gate disposed above the barrier layer including a field mitigating plate disposed on a side portion of a stem of the metal T-gate.
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Coffie Robert
Heying Ben
Hikin Boris
Liu Po-Hsin
Namba Carol
Mai Anh D
Northrop Grumman Systems Corporation
Posz Law Group , PLC
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