Method of forming a hard bias structure in a magnetic head

Details Method of forming a hard bias structure in a magnetic head Method of forming a hard bias structure in a magnetic head

2007-10-02

2007-10-02

Tugbang, A. Dexter (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S603010, C029S603130, C029S603140, C029S603160, C324S324000

Reexamination Certificate

active

11074244

ABSTRACT:
A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.

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Co-pending U.S. Appl. No. HT-04-055A, U.S. Appl. No. 11/074,270, filed Mar. 4, 2005, assigned to the same assignee.

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