Method of forming a gate quality oxide-compound semiconductor st

Details Method of forming a gate quality oxide-compound semiconductor st Method of forming a gate quality oxide-compound semiconductor st

1998-02-12

2000-12-12

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438779, 438763, H01L 213205, H01L 214763

Patent

active

061598348

ABSTRACT:
A gate quality oxide-compound semiconductor structure (10) is formed by the steps of providing a III-V compound semiconductor wafer structure (13) with an atomically ordered and chemically clean semiconductor surface in an ultra high vacuum (UHV) system (20), directing a molecular beam (26) of gallium oxide onto the surface of the wafer structure to initiate the oxide deposition, and providing a second beam (28) of atomic oxygen to form a Ga.sub.2 O.sub.3 layer (14) with low defect density on the surface of the wafer structure. The second beam of atomic oxygen is supplied upon completion of the first 1-2 monolayers of Ga.sub.2 O.sub.3. The molecular beam of gallium oxide is provided by thermal evaporation from a crystalline Ga.sub.2 O.sub.3 or gallate source, and the atomic beam of oxygen is provided by either RF or microwave plasma discharge, thermal dissociation, or a neutral electron stimulated desorption atom source.

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