Method of forming a gate of a semiconductor device

Details Method of forming a gate of a semiconductor device Method of forming a gate of a semiconductor device

2008-05-13

2008-05-13

Rose, Kiesha (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S592000, C438S596000, C438S275000

Reexamination Certificate

active

11283121

ABSTRACT:
In a method for forming a gate in a semiconductor device, a first preliminary gate structure is formed on a substrate. The first preliminary gate structure includes a gate oxide layer, a polysilicon layer pattern and a tungsten layer pattern sequentially stacked on the substrate. A primary oxidation process is performed using oxygen radicals at a first temperature for adjusting a thickness of the gate oxide layer to form a second preliminary gate structure having tungsten oxide. The tungsten oxide is reduced to a tungsten material using a gas containing hydrogen to form a gate structure. The tungsten oxide may not be formed on the gate structure so that generation of the whiskers may be suppressed. Thus, a short between adjacent wirings may not be generated.

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patent: 10-2001-0039009 (2001-05-01), None
patent: 10-2003-0080239 (2003-10-01), None

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