Method of forming a gate electrode on a semiconductor device...

Details Method of forming a gate electrode on a semiconductor device... Method of forming a gate electrode on a semiconductor device...

2006-08-08

2006-08-08

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S197000, C438S585000, C438S669000, C438S659000, C438S714000

Reexamination Certificate

active

07087509

ABSTRACT:
The present invention is directed to a semiconductor device having a gate electrode includes of a plurality of sidewalls, each having a recess formed therein. The present invention is also directed to a method of forming a semiconductor device. In one illustrative embodiment, the method comprises forming a layer of dopant material in a layer of polysilicon and etching the layer of polysilicon to define a gate electrode having a plurality of sidewalls, each of which have a recess formed therein.

REFERENCES:
patent: 4561907 (1985-12-01), Raicu
patent: 4577391 (1986-03-01), Hsia et al.
patent: 5472564 (1995-12-01), Nakamura et al.
patent: 6087246 (2000-07-01), Lee
patent: 6103603 (2000-08-01), Han
patent: 6309975 (2001-10-01), Wu et al.

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