Method of forming a gate contact in a semiconductor device

Details Method of forming a gate contact in a semiconductor device Method of forming a gate contact in a semiconductor device

2005-08-09

2005-08-09

Schillinger, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S413000, C257S752000

Reexamination Certificate

active

06927462

ABSTRACT:
A processing sequence for definition of gate contacts can be implemented using either a deep ultra-violet (DUV) or mid ultra-violet (MUV) positive resist processing and supports the use of a reticle that integrates contacts to various regions including gates, sources and drains of various devices. In a one example, the wafer is coated with a planarizing anti-reflective coating (ARC), which then supports imaging of gate contacts using a positive DUV or MUV resist. This processing allows the nitride cap of certain transistor gates to be replaced with an oxide. In this example, the ARC can serve as an etch guide for selective removal of a film.

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