Method of forming a fluorine-added insulating film

Details Method of forming a fluorine-added insulating film Method of forming a fluorine-added insulating film

1998-05-28

2000-09-19

Nelms, David

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438238, 438767, 437238, H01L 2131

Patent

active

061211621

ABSTRACT:
There is provided a method of forming an insulating film containing fluorine therein, including the steps of dissociating a process gas containing no hydrogen molecules and atoms with plasma in a reduced pressure, and varying said pressure while said insulating film is being formed, for controlling a content of fluorine in said insulating film. For instance, the pressure is first set low, then raised, and then lowered in the second step. The insulating film containing fluorine therein may be an amorphous carbon fluoride film or a silicon dioxide film containing fluorine therein. In accordance with the above-mentioned method, it is possible to form a fluorine-added insulating film in which hydrofluoric acid, a product causing many problems, is not generated, by using material containing no hydride. In addition, a control for a content of fluorine in an insulating film, which was difficult because the insulating film contains no hydride, can be carried out by varying a pressure while the insulating film is being formed.

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L.D.B. Kiss, et al., "CF and CF2 Actinometry in a CF4/Ar Plasma", J. Appl. Phys. 71, (7), Apr. 1, 1992.
H. Miyajima, et al., "Formation Mechanism of F-Added SiO2 Films using Plasma CVD", 1994 Dry Process Symposium.
K. Endo, et al. "Fluorinated Amorphous Carbon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition for Low Dielectric Constant Interlayer Dielectrics", J. Appl. Phys. 78, (2), Jul. 15, 1995.

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