Method of forming a fine pattern

Details Method of forming a fine pattern Method of forming a fine pattern

1993-04-08

1994-03-08

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 118728, 118723E, 20419213, 20419232, 20429815, H01L 2100

Patent

active

052924017

ABSTRACT:
A fine pattern forming apparatus includes a stage and an opposed electrode at least one of which is made of a magnetic material. A magnetic field is applied to this stage or opposed electrode to provide a predetermined gap between the stage and the opposed electrode for a fine pattern formation. In consequence, optimum etching conditions (including etching uniformity, etch rate and etching direction) can be assured without generating dust. As a result, damage caused by the plasma can be reduced, and the etch rate can be increased.

REFERENCES:
patent: 4351805 (1982-09-01), Reisman et al.
patent: 4563240 (1986-01-01), Shibata et al.
Yoneda et al, "Anisotropic Etching of Poly-Si By RIE", Dry Process Symposium, 1981, pp. 47-53.

Affiliated with

Also associated with

Rating

Method of forming a fine pattern does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a fine pattern, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a fine pattern will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-150695