Method of forming a field effect transistor and method of formin

Details Method of forming a field effect transistor and method of formin Method of forming a field effect transistor and method of formin

1996-08-12

1998-06-30

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438300, 438301, 438521, 148DIG141, H01L 21265

Patent

active

057733589

ABSTRACT:
Methods of forming field effect transistors. In one aspect, a method of forming a field effect transistor includes: a) providing a gate structure over a semiconductor substrate, the gate structure comprising a conductively-doped polysilicon region and a dopant masking cap over the conductively-doped polysilicon region; b) providing a layer of polysilicon over the substrate and over the dopant masking cap of the gate structure, the polysilicon layer defining a pair of polysilicon outward projections extending from the semiconductor substrate adjacent the gate structure; c) removing the layer of polysilicon from over the dopant masking cap; d) while the dopant masking cap is over the polysilicon region, conductively doping the pair of polysilicon projections with one of an n-type or a p-type conductivity enhancing dopant impurity; and e) out-diffusing the one of the n-type conductivity enhancing dopant impurity or the p-type conductivity enhancing dopant impurity from the pair of polysilicon projections into the semiconductor substrate to provide one of NMOS or PMOS type diffusion regions, respectively, within the substrate adjacent the gate line.

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