Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-09-15
1999-08-17
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257773, H01L 2976
Patent
active
059397616
ABSTRACT:
A method for forming a field effect transistor on a substrate includes providing a wordline on the substrate; providing composite masking spacers laterally outward relative to the wordline, the composite masking spacers comprising at least two different materials; removing at least one of the materials of the composite masking spacers to effectively expose the substrate area adjacent to the wordline for conductivity enhancing doping; and subjecting the effectively exposed substrate to conductivity enhancing doping to form source/drain regions. Another aspect of the invention is to provide a method for forming a field effect transistor including providing a gate on the substrate, providing a first layer of nitride over the gate; providing a second layer of a masking material over the first layer of nitride; anisotropically etching the first and second layers to define composite oxidation masking spacers positioned laterally outward relative to the patterned gate; and exposing the substrate to oxidation condition effective to form a field oxide region laterally outward of the composite oxidation masking spacers, the composite oxidation masking spacers effectively restricting oxidation of the substrate therebeneath.
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Ahmad Aftab
Dennison Charles H.
Micro)n Technology, Inc.
Prenty Mark V.
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