Method of forming a dual damascene with dummy metal lines

Details Method of forming a dual damascene with dummy metal lines Method of forming a dual damascene with dummy metal lines

1998-10-01

1999-12-14

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438634, H01L 2144

Patent

active

060017333

ABSTRACT:
A method for forming dual damascene is provided. First, a first inter-metal dielectric layer and a stop layer is formed on a substrate, and then a first photoresist pattern including a via hole and a dummy metal line is patterned and the stop layer is etched for forming via hole. Next, a second inter-metal dielectric layer is deposited and then a second photoresist pattern is patterned for forming metal line trench by etching. Afterwards, a glue layer and a metal layer are blanketed and the dual damascene structure is formed by chemical mechanical polishing.

REFERENCES:
patent: 4789648 (1988-12-01), Chow et al.
patent: 5578523 (1996-11-01), Fiordalice et al.
patent: 5741626 (1998-04-01), Jain et al.
patent: 5793272 (1996-08-01), Burghartz et al.
patent: 5801094 (1998-09-01), Yew et al.
patent: 5801095 (1998-09-01), Huang et al.
patent: 5884990 (1996-08-01), Burghartz et al.

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