Method of forming a dual damascene structure

Details Method of forming a dual damascene structure Method of forming a dual damascene structure

2007-07-10

2007-07-10

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C438S672000, C438S700000, C257S758000

Reexamination Certificate

active

10789083

ABSTRACT:
An improved method of forming an integrated circuit that includes a dual damascene interconnect is described. A contact via hole is formed in a dielectric layer disposed above a semiconductor substrate. A protective layer is disposed on top of the dielectric layer and in the contact via hole, and subsequently forming as a recessed plug in the via, followed by etching to form a trench to complete formation of a dual damascene opening.

REFERENCES:
patent: 6013581 (2000-01-01), Wu et al.
patent: 6057239 (2000-05-01), Wang et al.
patent: 6268283 (2001-07-01), Huang
patent: 6350681 (2002-02-01), Chen et al.
patent: 6365529 (2002-04-01), Hussein et al.
patent: 6514860 (2003-02-01), Okada et al.
patent: 6861347 (2005-03-01), Lee et al.
Ding et al. “Optimization of Bottom Antireflective Coating Materials for Dual Damascene Process”,SPIE Proceedings, 3999, (2000), pp. 910-918.
Pollentier et al., “Dual Damascene Back-End Patterning Using 248 nm and 193 nm Lithography”,Interface 2000, pp. 265-283.
Gadson et al., “Top Surface Imaging Improves Copper Process Resolution”,Solid State Technology, pp. 1-5, 77(2001).

Affiliated with

Also associated with

Rating

Method of forming a dual damascene structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a dual damascene structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a dual damascene structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3774990