Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2009-05-19
2011-10-04
Smith, Matthew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C438S164000
Reexamination Certificate
active
08030143
ABSTRACT:
A method of forming a display device is provided. The method includes the following steps: providing a substrate which includes a driving circuit region and a pixel region; forming a first island and a second island in the driving circuit region on the substrate with a semiconductor material; performing a first ion implantation process to dope ions into both of the first island and the second island; forming a first patterned mask on the substrate to cover the second island and expose a part of the first island; performing a second ion implantation process by using the first patterned mask as a mask to form a first source/drain region in the first island; removing the first patterned mask; forming a first gate and a second gate on the first island and the second island respectively; forming a second patterned mask on the substrate to cover the first island and expose a part of the second island; and performing a third ion implantation process by using both of the second patterned mask and the second gate as a mask to form a second source/drain region in the second island. The first island, the first source/drain region, and the first gate form a NMOS device, and the second island, the second source/drain region, and the second gate form a PMOS device.
REFERENCES:
patent: 7227187 (2007-06-01), Hotta
patent: 7256457 (2007-08-01), Hotta
patent: 7348631 (2008-03-01), Hotta
Lin Tsung-Yen
Peng Chih-Hung
Tsai Shan-Hung
Wu Chien-Peng
Yeh Yi Chun
Jung Michael
Lowe Hauptman & Ham & Berner, LLP
Smith Matthew
TPO Displays Corp.
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