Method of forming a diffusion barrier

Details Method of forming a diffusion barrier Method of forming a diffusion barrier

2007-04-10

2007-04-10

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S584000

Reexamination Certificate

active

10946310

ABSTRACT:
A barrier limits the diffusion of a metal, such as copper, into an insulating layer. The barrier may take the form of insulating layer made of a silicon carbide type material which has been exposed to ionised hydrogen subsequent to deposition. Preferably the material contains nitrogen and it is particularly preferred that the material has a dielectric constant of 3.5 or less.

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