Method of forming a dielectric layer on a semiconductor wafer

Details Method of forming a dielectric layer on a semiconductor wafer Method of forming a dielectric layer on a semiconductor wafer

1999-07-26

2000-07-25

Smith, Matthew

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438453, 438597, 438618, H01L 214763

Patent

active

060936347

ABSTRACT:
The present invention provides a method of forming a dielectric layer on a semiconductor wafer. The semiconductor wafer comprises a bottom dielectric layer and a plurality of metal lines each having a rectangular cross section positioned on the bottom dielectric layer. The method is performed in a high-density plasma chemical vapor deposition apparatus. A first deposition process at a first etching/deposition (E/D) ratio is performed to form a first dielectric layer with a predetermined thickness on the semiconductor wafer. The first dielectric layer covers the surface of the metal lines and forms a triangular ridge above each metal line. The upper side of each of the ridges has two slanted side-walls. Then, a second deposition process at a second E/D ratio is performed to form a second dielectric layer with a predetermined thickness on the semiconductor wafer with the second deposition process etching rate being near zero. The second dielectric layer above each metal line reduces the slope of the two slanted side-walls of the ridges. Thus, a dielectric layer with the first dielectric layer and the second layer is formed.

REFERENCES:
patent: 5089442 (1992-02-01), Olmer
patent: 5946592 (1998-03-01), Lin

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