Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1986-02-28
1987-09-08
Smith, John D.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
437241, H01L 21318
Patent
active
046923446
ABSTRACT:
A method for forming a dielectric film over a semiconductor device is disclosed. The body of semiconductor material is formed and a hydrogen-containing silicon nitride material substantially free of silicon-hydrogen bonds is formed thereover.
Also disclosed is a semiconductor device, including a body of semiconductor material and a dielectric film thereover. The dielectric film is a hydrogen-containing silicon nitride material substantially free of silicon-to-hydrogen bonds.
REFERENCES:
patent: 3412297 (1968-11-01), Amlinger
patent: 4142004 (1979-02-01), Hauser
patent: 4282267 (1981-08-01), Kuyel
patent: 4331709 (1982-05-01), Risch
patent: 4342617 (1982-08-01), Fu
patent: 4443933 (1984-04-01), de Brebisson
patent: 4513021 (1985-04-01), Purdes
patent: 4530149 (1985-07-01), Jastrzebski et al.
patent: 4576829 (1986-03-01), Kaganowicz
Morosanu et al., "Thin Film Preparation by Plasma and LPCVD in a Horizontal Reactor", Vacuum, vol. 31, No. 7, pp. 309-313, Dec. 1981.
Hezel et al., "Plasma Si Nitride . . .", J. Appl. Phys., 52(4), Apr. 1981, pp. 3076-3079.
Crandall Richard S.
Ipri Alfred C.
Kaganowicz Grzegorz
Burke William J.
RCA Corporation
Smith John D.
Whitacre Eugene M.
LandOfFree
Method of forming a dielectric film and semiconductor device inc does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a dielectric film and semiconductor device inc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a dielectric film and semiconductor device inc will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2157544