Method for manufacturing a conductive pattern structure for a se

Details Method for manufacturing a conductive pattern structure for a se Method for manufacturing a conductive pattern structure for a se

1995-06-06

1997-06-17

Niebling, John

Fishing, trapping, and vermin destroying

437194, 437247, 437192, 437188, H01L 2144

Patent

active

056396902

ABSTRACT:
A method is provided of fabricating a semiconductor device having a wiring layer of a desired resistance component and capable of eliminating variation of wiring resistance by causing breakage of an Al or Al alloy layer of a laminated structure at certain positions. The multilayer conductive patterns of the invention include a laminate of a low melting point conductive layer formed of at least aluminum and a high melting point conductive layer. The side surfaces of the low melting point conductive layer includes recessed portions located at spaced apart length intervals of the multilayer conductive patterns.

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"Standard Growth of Aluminum Using a Novel CVD System", T. Amazawa et al., NTT LSI Laboratories, 1988 IEEE, pp. 442-445.

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