Method of forming a dielectric film

Details Method of forming a dielectric film Method of forming a dielectric film

1996-12-13

1998-06-09

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

4272552, 4272553, 427294, 427585, H05H 124

Patent

active

057630216

ABSTRACT:
The present invention relates to a method of forming a dielectric film, a semiconductor device comprising the same, a method of operating a plasma enhanced chemical vapor deposition apparatus and a method of manufacturing a semiconductor device comprising the dielectric film.

REFERENCES:
patent: 4579571 (1986-04-01), Hicks
patent: 4894352 (1990-01-01), Lane et al.
patent: 5215787 (1993-06-01), Homma
patent: 5288518 (1994-02-01), Homma
patent: 5334454 (1994-08-01), Caporiccio et al.
patent: 5334552 (1994-08-01), Homma
patent: 5429995 (1995-07-01), Nishiyama et al.
patent: 5563105 (1996-10-01), Dobuzinsky et al.
patent: 5571576 (1996-11-01), Qian et al.
patent: 5578531 (1996-11-01), Kodera et al.
patent: 5629246 (1997-05-01), Iyer
patent: 5633211 (1997-05-01), Imai et al.
patent: 5643640 (1997-07-01), Chakravarti et al.
patent: 5661093 (1997-08-01), Ravi et al.
J.Electrochem.Soc. vol. 143, No. 6, Jun., 1996 Dielectric Constant and Stability of Fluorine-Doped Plasma Enhanced Chemical Vapor Deposited SiO Thin Films, Peter W. Lee, Shinsuke Mizuno, Amrita Verma, Huyen Tran and Bang Nguyen.

Affiliated with

Also associated with

Rating

Method of forming a dielectric film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a dielectric film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a dielectric film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2196491