Method of forming a device substrate and semiconductor...

Details Method of forming a device substrate and semiconductor... Method of forming a device substrate and semiconductor...

2005-06-14

2005-06-14

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S612000, C438S613000, C438S690000

Reexamination Certificate

active

06905951

ABSTRACT:
A semiconductor device substrate has fine terminals with a small pitch and is able to be easily produced at a low cost without using a special process. A mounting terminal has a pyramidal shape and extending between a front surface and a back surface of a silicon substrate. An end of the mounting terminal protrudes from the back surface of the silicon substrate. A wiring layer is formed on the front surface of the silicon substrate. The wiring layer includes a conductive layer that is electrically connected to the mounting terminal.

REFERENCES:
patent: 6114221 (2000-09-01), Tonti et al.
patent: 2002/0030245 (2002-03-01), Hanaoka et al.
patent: 2002/0115293 (2002-08-01), Ghodsian
patent: 08-213427 (1996-08-01), None
patent: 2001-007248 (2001-01-01), None
Tomita et al.;Fine Bump Bonding in Three-Dimensional Mounting;Electronics Mounting Technology, vol. 17, No. 12, pp. 38-43, Dec 2001.

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