Method of forming a device by removing a conductive layer of...

Details Method of forming a device by removing a conductive layer of... Method of forming a device by removing a conductive layer of...

2005-02-02

2009-02-17

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S048000, C257S417000

Reexamination Certificate

active

07491566

ABSTRACT:
A method of forming a MEMS device provides a wafer having a base, a first conductive layer, a second conductive layer, and an intermediate conductive layer. After it provides the wafer, the method removes at least a portion of the intermediate conductive layer to form a cavity between the first and second conductive layers. At least a portion of the first conductive layer is movable relative to the base to form a diaphragm, while the second conductive layer is substantially immovable relative to the base. After it forms the cavity, the method seals the cavity.

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Authorized Officer Klaus Meierewert,The International Search Report and The Written Opinion of the International Searching Authority, The International Searching Authority, Jun. 6, 2005, 10 pages.

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