Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-12
2007-06-12
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S678000, C257SE21575
Reexamination Certificate
active
10942302
ABSTRACT:
Methods are provided for forming a circuit component on a workpiece substrate. The methods comprise the steps of depositing a dielectric material over the substrate; etching a pattern through the dielectric material to expose a portion of the substrate; depositing a barrier metal over the dielectric material and the exposed portion of the substrate; depositing a conductive metal over the barrier metal, the deposited conductive metal having a thickness sufficient to fill the etched pattern; planarizing the conductive metal to form a planar metal layer; and polishing the metal layer and the barrier metal in a single polishing step using an abrasive-free polish until the dielectric material surrounding the pattern is exposed.
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Chiang Chien
Somekh Sasson
Wu Tom
Ghyka Alexander
Ingrassia Fisher & Lorenz P.C.
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