Method of forming a crystalline phase material, electrically con

Details Method of forming a crystalline phase material, electrically con Method of forming a crystalline phase material, electrically con

1998-02-23

2000-07-18

Picardat, Kevin M.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438649, 438655, H01L 2144

Patent

active

060907088

ABSTRACT:
A method of forming a crystalline phase material includes providing a stress inducing material on a substrate and, after providing the stress inducing material on the substrate, depositing a crystalline phase material over the substrate in a substantially continuous manner and changing deposition temperature at least once during the depositing, and forming the second crystalline phase of the crystalline phase material. In accordance another aspect, a method is performed by providing a stress inducing material on a substrate and, after providing the stress inducing material on the substrate, forming a crystalline phase material over the substrate in at least two discrete crystalline phase material depositions, a later of the depositions being conducted at a different temperature from an earlier of the depositions and forming the second crystalline phase of the crystalline phase material. In another aspect, a method is performed by forming a refractory metal silicide layer of C54 crystalline phase on a substrate, and depositing refractory metal silicide material onto the C54 refractory metal silicide layer with the C54 crystalline phase being induced into the refractory metal silicide material from the C54 crystalline phase in the refractory metal silicide layer.

REFERENCES:
patent: 4568565 (1986-02-01), Gupta et al.
patent: 4971655 (1990-11-01), Stefano et al.
patent: 5240739 (1993-08-01), Doan et al.
patent: 5376405 (1994-12-01), Doan et al.
patent: 5997634 (1999-12-01), Sandhu et al.
Ilderem, V., et al., "Optimized Deposition Parameters For Low Pressure Chemical Vapor Deposited Titanium Silicide", Massachusetts Institute of Technology, vol. 135, No. 10, pp. 2590-2596 (Feb. 1988).
Nagabushnam, R.V., "Kinetics And Mechanism Of The C49 to C54 Titanium Disilicide Phase Transformation Formation In Nitrogen Ambient", 5 Pages (Nov. 1995).

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