Method of forming a copper-based metallization layer...

Details Method of forming a copper-based metallization layer... Method of forming a copper-based metallization layer...

2007-06-12

2010-06-29

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S626000, C438S638000, C438S622000, C438S623000, C438S643000, C438S648000, C438S653000, C438S656000, C438S672000, C438S685000, C438S687000, C438S688000, C438S629000, C257SE23145, C257SE21579, C257S758000, C257S774000

Reexamination Certificate

active

07745327

ABSTRACT:
By appropriately designing a plurality of deposition steps and intermediate sputter processes, the formation of a barrier material within a via opening may be accomplished on the basis of a highly efficient process strategy that readily integrates conductive cap layers formed above metal-containing regions into well-approved process sequences.

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Translation of Official Communication from German Patent Office for German Patent Application No. 10 2007 004 860.4-33 dated Oct. 2, 2007.

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