Method of forming a contact window

Details Method of forming a contact window Method of forming a contact window

1998-04-20

2000-08-15

Booth, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438279, 438301, 438303, 438305, 438585, H01L 21336, H01L 214763

Patent

active

061036080

ABSTRACT:
The present invention discloses a method of forming a contact window on a substrate. The method in the present invention includes a step of forming a gate structure on said substrate having a gate oxide, a gate electrode on the gate oxide, and a gate electrode protection layer on the gate electrode, a step of forming a protection layer conforming with the substrate and the gate structure, and a step of forming a first insulation layer over the protection layer. The method further includes removing a portion of the first insulation layer and a portion of the protection layer for forming side wall spacers at side walls of the gate structure, performing a ion implantation to the substrate using the gate structure and the side wall spacers as a mask, and then forming a second insulation layer on the substrate, the side wall spacers, and the gate structure. The method further includes patterning a photoresist layer on the second insulation layer to expose a portion of second insulation layer for making a connection. Finally, a portion of the second insulation layer is removed for forming a contact window.

REFERENCES:
patent: 5670401 (1997-09-01), Tseng
patent: 5817562 (1998-10-01), Chang et al.
patent: 5854135 (1998-12-01), Ko
patent: 5907789 (1999-05-01), Komatsu

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