Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Patent
1997-06-19
1999-09-28
Beck, Shrive
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
438697, 438700, 438760, 438783, 438646, 427527, 427 96, H01L 2100, C23C 1414
Patent
active
059603216
ABSTRACT:
A method of forming a contact via includes forming a wiring, a first insulator layer, and a spin-on glass layer, respectively, over a semiconductor substrate. Fluorine ions are implanted into the spin-on glass layer. A second insulator layer is formed over the spin-on glass layer. The wiring is exposed by patterning the second insulator layer, the spin-on glass layer, and the first insulator layer, respectively.
REFERENCES:
patent: 4535528 (1985-08-01), Chen et al.
patent: 4816115 (1989-03-01), Hoerner et al.
patent: 4918027 (1990-04-01), Fuse et al.
patent: 5192697 (1993-03-01), Leong
patent: 5413940 (1995-05-01), Lin et al.
patent: 5429990 (1995-07-01), Liu et al.
patent: 5432073 (1995-07-01), Wu et al.
patent: 5496776 (1996-03-01), Chien et al.
Hsieh Ching-Hsing
Hsu Chin-Ching
Lin Jiunn Hsien
Tsai Chen-Chih
Beck Shrive
Strain Paul
United Microelectronics Corp.
LandOfFree
Method of forming a contact via does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a contact via, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a contact via will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-715425