Method of forming a contact via

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

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Details

438697, 438700, 438760, 438783, 438646, 427527, 427 96, H01L 2100, C23C 1414

Patent

active

059603216

ABSTRACT:
A method of forming a contact via includes forming a wiring, a first insulator layer, and a spin-on glass layer, respectively, over a semiconductor substrate. Fluorine ions are implanted into the spin-on glass layer. A second insulator layer is formed over the spin-on glass layer. The wiring is exposed by patterning the second insulator layer, the spin-on glass layer, and the first insulator layer, respectively.

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