Method of forming a contact plug in a semiconductor device

Details Method of forming a contact plug in a semiconductor device Method of forming a contact plug in a semiconductor device

2006-05-23

2006-05-23

Pourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S660000, C438S661000, C438S675000

Reexamination Certificate

active

07049230

ABSTRACT:
A contact plug is formed in a semiconductor device having a silicon substrate having a gate electrode, a junction area and an insulating interlayer. A contact hole is formed to expose the junction area. A plasma process is carried out with respect to a resultant substrate, thereby removing natural oxides created on an exposed surface of the junction area. A first silicon layer is deposited on the contact hole and on the insulating interlayer. A heat-treatment process is carried out with respect to the first silicon layer so as to grow the amorphous silicon into the epitaxial silicon. A second silicon layer is deposited on the first silicon layer.

REFERENCES:
patent: 5930675 (1999-07-01), Hada
patent: 6844259 (2005-01-01), Cheong

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