Method of forming a contact of a semiconductor device

Details Method of forming a contact of a semiconductor device Method of forming a contact of a semiconductor device

1998-06-26

2000-06-06

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438597, 438620, 438621, H01L 214763

Patent

active

060717998

ABSTRACT:
The present invention relates to a method of forming a contact of a semiconductor device, and more particularly, to a method of forming a contact of a semiconductor device that can improve the process yield of the device and reliability by simplifying the process of forming the contact hole of the top conductive layer without removing the etching barrier layer of the portion on which the contact hole of the top conductive layer is to be formed when a storage electrode contact is formed, where the contact hole of the top conductive layer is formed on the top of the bottom conductive layer, which refers to a process of forming the self-alignment contact.

REFERENCES:
patent: 5498889 (1996-03-01), Hayden
patent: 5576243 (1996-11-01), Wuu et al.
patent: 5610083 (1997-03-01), Chan et al.
patent: 5643833 (1997-07-01), Tsukamoto et al.
patent: 5710073 (1998-01-01), Jeng et al.
patent: 5811350 (1998-09-01), Dennison

Affiliated with

Also associated with

Rating

Method of forming a contact of a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a contact of a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a contact of a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2212898