Method of forming a contact in a semiconductor device with...

Details Method of forming a contact in a semiconductor device with... Method of forming a contact in a semiconductor device with...

2006-03-27

2011-10-18

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S664000, C257S757000, C257SE29111

Reexamination Certificate

active

08039391

ABSTRACT:
A method of forming a contact in a semiconductor device provides a titanium contact layer in a contact hole and a MOCVD-TiN barrier metal layer on the titanium contact layer. Impurities are removed from the MOCVD-TiN barrier metal layer by a plasma treatment in a nitrogen-hydrogen plasma. The time period for plasma treating the titanium nitride layer is controlled so that penetration of nitrogen into the underlying titanium contact layer is substantially prevented, preserving the titanium contact layer for subsequently forming a titanium silicide at the bottom of the contact.

REFERENCES:
patent: 5627102 (1997-05-01), Shinriki et al.
patent: 5747116 (1998-05-01), Sharan et al.
patent: 6365495 (2002-04-01), Wang et al.
patent: 6436819 (2002-08-01), Zhang et al.
patent: 2003/0194859 (2003-10-01), Huang

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