Method of forming a contact in a semiconductor device with...

Details Method of forming a contact in a semiconductor device with... Method of forming a contact in a semiconductor device with...

2005-08-09

2005-08-09

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S644000, C438S648000, C438S649000, C438S675000

Reexamination Certificate

active

06927162

ABSTRACT:
A method of forming a contact in a semiconductor device deposits a refractory metal contact layer in a contact hole on a conductive region portion in a silicon substrate. The refractory metal contact layer is reacted with the silicide region prior to a plasma treatment of a contact barrier metal layer formed within the contact hole. This prevents portions of the refractory metal contact layer from being nitridated prior to conversion to silicide.

REFERENCES:
patent: 2003/0072884 (2003-04-01), Zhang et al.
patent: 2003/0194859 (2003-10-01), Huang

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