Method of forming a contact in a semiconductor device

Details Method of forming a contact in a semiconductor device Method of forming a contact in a semiconductor device

2005-10-24

2010-10-19

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21585

Reexamination Certificate

active

07816259

ABSTRACT:
Deterioration of yield may be prevented when a contact in a semiconductor device is made by a method including forming a contact hole by selectively removing an insulating layer from a semiconductor substrate, depositing a barrier layer on the insulating layer and on the surface of (or in) the contact hole, depositing an initial tungsten layer on the barrier layer to at least a predetermined thickness, removing particles generated during at least one of the depositing steps, and filling the contact hole with an additional tungsten layer.

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