Method of forming a contact in a semiconductor device...

Details Method of forming a contact in a semiconductor device... Method of forming a contact in a semiconductor device...

2005-06-28

2005-06-28

Chambliss, Alonzo (Department: 2814)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S639000, C438S667000

Reexamination Certificate

active

06911382

ABSTRACT:
Semiconductor devices and methods to form a contact of a semiconductor device are disclosed. An example method to form a contact includes forming an insulating layer on a substrate; etching the insulating layer to form a contact hole; depositing a silicon layer on sidewalls and an undersurface of the contact hole; forming a silicon spacer on the sidewalls of the contact hole by etching the silicon layer; transforming the silicon spacer to a silicon nitride spacer; depositing a diffusion barrier on the silicon nitride spacer; and filling the contact hole with tungsten. Because the silicon nitride spacer formed on the sidewalls of the contact hole can serve as a leakage current blocking layer, the yield and the reliability of the semiconductor devices manufactured by this example process are enhanced.

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