Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-04-15
2008-04-15
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S098000, C438S453000, C438S584000, C438S597000, C438S669000, C438S689000, C438S695000, C216S017000, C216S018000
Reexamination Certificate
active
07358184
ABSTRACT:
A method of forming a conductive via plug is disclosed. The conductive via plug is formed by printing a solution comprising a solvent with insulating material dissolve capability and a conductive material by an inkjet method. The formed conductive via plug has a low resistivity and thus may serve as an electrical connection between two separate conductive layers. This manufacturing method of the conductive via plug may achieve simultaneously deposition, patterning and etching purposes, which significantly simplifies the manufacturing process.
REFERENCES:
patent: 5976393 (1999-11-01), Abe
patent: 6270389 (2001-08-01), Kobayashi et al.
patent: 2003/0059987 (2003-03-01), Sirringhaus et al.
patent: 2003/0107044 (2003-06-01), Kubota et al.
Chang Jane
Chen Chun-Jung
Cheng Chao-Kai
Liu Chien-Hung
Liu Kou-Chen
Au Bac H.
Birch & Stewart Kolasch & Birch, LLP
Industrial Technology Research Institute
Smith Zandra V.
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