Method of forming a conductive plug in an interlevel dielectric

Details Method of forming a conductive plug in an interlevel dielectric Method of forming a conductive plug in an interlevel dielectric

1997-08-07

1999-08-10

Baxter, Janet

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430312, 430313, 430314, G03F 700, H01L 2102

Patent

active

059357665

ABSTRACT:
A method of forming a conductive plug in an interlevel dielectric includes forming a lower dielectric layer over a semiconductor substrate. A first etch mask is formed over the lower dielectric layer and is patterned using a reticle. A first etch is applied through an opening in the first etch mask to form an opening in the lower dielectric layer. A lower conductor is formed in the opening in the lower dielectric layer. A conducting layer is formed over the lower dielectric layer and the lower conductor. A second etch mask is formed over the conducting layer and is patterned using the reticle. A second etch is applied through an opening in the second etch mask to form a contact pad from an unetched portion of the conducting layer. An upper dielectric layer is formed over the lower dielectric layer and the contact pad. A third etch mask is formed over the upper dielectric layer and is patterned using the reticle. A third etch is applied through an opening in the third etch mask to form an opening in the upper dielectric layer. An upper conductor is formed in the opening in the upper dielectric layer. As a result, the conductive plug includes the upper and lower conductors and the contact pad, and the interlevel dielectric includes the upper and lower dielectric layers.

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