Method of forming a conductive pattern by removing a...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S706000

Reexamination Certificate

active

07037832

ABSTRACT:
A method for forming a conductive or magnetic pattern for a semiconductor or other electronic device includes patterning a mask layer outwardly from a conductive layer of the semiconductor device. The patterning defines portions of the conductive layer where vias through the conductive layer are desired. The method also includes exposing the semiconductor device to a plasma. The plasma converts the unmasked portions of the conductive layer into a compound. The method further includes exposing the semiconductor device to a treatment process to selectively remove the compound. The mask layer may be removed either before or after removal of the compound, thereby providing the unmasked conductive layer in the desired pattern.

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U.S. Appl. No. 09/736,043, entitled “Semiconductor Conductive Pattern Formation Method”, inventor, Yue Kuo, Dec. 12, 2000.

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