Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-04-27
2009-02-17
Smith, Zandra (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S259000, C438S429000, C438S430000, C438S642000, C438S648000
Reexamination Certificate
active
07491641
ABSTRACT:
This invention includes methods of forming conductive lines, and methods of forming conductive contacts adjacent conductive lines. In one implementation, a method of forming a conductive line includes forming a conductive line within an elongated trench within first insulative material over a semiconductive substrate. The conductive line is laterally spaced from opposing first insulative material sidewall surfaces of the trench. The conductive line includes a second conductive material received over a different first conductive material. The second conductive material is recessed relative to an elevationally outer surface of the first insulative material proximate the trench. A second insulative material different from the first insulative material is formed within the trench over a top surface of the conductive line and within laterally opposing spaces received between the first insulative material and the conductive line. In one implementation, a conductive contact is formed adjacent to and insulated from the conductive line.
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McDaniel Terrence B.
Schrinsky Alex J.
Southwick Scott A.
Micro)n Technology, Inc.
Rodgers Colleen E
Smith Zandra
Wells St. John P.S.
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