Method of forming a conductive line

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate

Reexamination Certificate

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Details

C438S230000, C438S286000, C438S366000, C438S445000, C438S595000, C257S900000, C257SE21626, C257SE21640

Reexamination Certificate

active

07094636

ABSTRACT:
A method of forming a conductive line includes forming conductive material received over a semiconductor substrate into a line having opposing sidewalls. Insulative material is deposited over the line, and is planarized. An insulating spacer forming layer is deposited over the line and the planarized insulative material. The spacer forming layer is anisotropically etched form a pair of insulative spacers over the opposing line sidewalls with the insulative material being received between at least one of the sidewalls and one insulative spacer formed thereover. The insulative material as so received has a maximum lateral thickness which is greater than a maximum lateral thickness of the one sidewall spacer.

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