Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2006-08-22
2006-08-22
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S230000, C438S286000, C438S366000, C438S445000, C438S595000, C257S900000, C257SE21626, C257SE21640
Reexamination Certificate
active
07094636
ABSTRACT:
A method of forming a conductive line includes forming conductive material received over a semiconductor substrate into a line having opposing sidewalls. Insulative material is deposited over the line, and is planarized. An insulating spacer forming layer is deposited over the line and the planarized insulative material. The spacer forming layer is anisotropically etched form a pair of insulative spacers over the opposing line sidewalls with the insulative material being received between at least one of the sidewalls and one insulative spacer formed thereover. The insulative material as so received has a maximum lateral thickness which is greater than a maximum lateral thickness of the one sidewall spacer.
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Fourson George
Micro)n Technology, Inc.
Pham Thanh V.
Wells St. John P.S.
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