Method of forming a conductive diffusion barrier

Details Method of forming a conductive diffusion barrier Method of forming a conductive diffusion barrier

1995-08-24

1996-10-22

Quach, T. N.

Fishing, trapping, and vermin destroying

437 62, 437192, 437193, 437225, 148DIG12, H01L 2128, H01L 2130

Patent

active

055676499

ABSTRACT:
A plurality of doped areas (12, 13, 14) are formed on a surface of a semiconductor wafer. A titanium nitride layer (17) is used for covering the plurality of doped areas (12, 13, 14) and for providing electrical connection between the doped areas (12, 13, 14). The titanium nitride layer (17) substantially prevents dopants from diffusing into the titanium nitride (17) and subsequently counterdoping the doped areas (12, 13, 14) during subsequent high temperature processing operations.

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