Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-05-03
2005-05-03
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S753000, C257S754000, C257S763000, C257S764000, C257S775000
Reexamination Certificate
active
06888252
ABSTRACT:
Conductive contacts in a semiconductor structure, and methods for forming the conductive components are provided. The method comprises depositing a conductive material over a substrate to fill a contact opening, removing excess material from the substrate leaving the contact within the opening, and then heating treating the contact at a high temperature, preferably with a rapid thermal anneal process, in a reactive gas to remove an undesirable component from the contact, for example, thermal annealing a TiCl4-based titanium nitride in ammonia to remove chlorine from the contact, which can be corrosive to an overlying aluminum interconnect at a high concentration. The contacts are useful for providing electrical connection to active components in integrated circuits such as memory devices. In an embodiment of the invention, the contacts comprise boron-doped and/or undoped TiCl4-based titanium nitride having a low concentration of chlorine. Boron-doped contacts further possess an increased level of adhesion to the insulative layer to eliminate peeling from the sidewalls of the contact opening and cracking of the insulative layer when formed to a thickness of greater than about 200 angstroms in a high-aspect-ratio opening.
REFERENCES:
patent: 4793896 (1988-12-01), Douglas
patent: 4897709 (1990-01-01), Yokoyama et al.
patent: 4987709 (1991-01-01), Bucci
patent: 5279857 (1994-01-01), Eichman et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5700716 (1997-12-01), Sharan et al.
patent: 5747116 (1998-05-01), Sharan et al.
patent: 5851680 (1998-12-01), Heau
patent: 5908947 (1999-06-01), Vaartstra
patent: 5946594 (1999-08-01), Iyer et al.
patent: 5976976 (1999-11-01), Doan et al.
patent: 5977636 (1999-11-01), Sharan
patent: 5990021 (1999-11-01), Prall et al.
patent: 6010940 (2000-01-01), Lee et al.
patent: 6037252 (2000-03-01), Hillman et al.
patent: 6054191 (2000-04-01), Sharan et al.
patent: 6086442 (2000-07-01), Sandhu et al.
patent: 6156638 (2000-12-01), Agarwal et al.
patent: 6184135 (2001-02-01), Ku
patent: 6200649 (2001-03-01), Dearnaley
patent: 6207557 (2001-03-01), Lee et al.
patent: 6284646 (2001-09-01), Leem
patent: 6329670 (2001-12-01), Hu
patent: 6335277 (2002-01-01), Ohto
patent: 6436820 (2002-08-01), Hu et al.
patent: 6511900 (2003-01-01), Agarwal et al.
patent: 20010002071 (2001-05-01), Agarwal et al.
patent: 20010006240 (2001-07-01), Doan et al.
patent: 20010025972 (2001-10-01), Moriwake et al.
patent: 20010030235 (2001-10-01), Hedemann et al.
patent: 20010030552 (2001-10-01), Hu
patent: 20020001908 (2002-01-01), Agarwal et al.
patent: 20020155219 (2002-10-01), Wang et al.
patent: 20030025206 (2003-02-01), Derraa et al.
patent: 20030042607 (2003-03-01), Derraa et al.
patent: 20030075802 (2003-04-01), Derraa et al.
patent: 20030077895 (2003-04-01), Derraa et al.
patent: 05267220 (1993-10-01), None
patent: 09306870 (1997-11-01), None
patent: 10-172924 (1998-06-01), None
patent: 10-223563 (1998-08-01), None
Clark Jasmine
Micro)n Technology, Inc.
Whyte Hirschboeck Dudek SC
LandOfFree
Method of forming a conductive contact does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a conductive contact, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a conductive contact will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3442429